Multi-Junction Detector Device and Method of Manufacture

ABSTRACT

A novel multi-junction detector device and method of manufacture is disclosed, which includes providing a housing, at least one system mount body positioned within the housing, forming at least one beam dump region in the system mount body in optical communication with at least one first detector having a first wavelength responsivity range positioned on the system mount body and at least one second detector having a second wavelength responsivity range positioned on the system mount body in optical communication with the first detector. An arcuate shape, an arcuate shape of varying radius, a polygonal shape or a polyhedral shape may be formed on at least one mount body wall in the beam dump region. The method may also comprise depositing at least one reflectivity enhancing material onto the mount body wall. The method may further comprise depositing an energy dissipating material on the mount body wall.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to U.S. Provisional PatentApplication Ser. No. 62/370,204—entitled “Multi-Junction Detector Deviceand Method of Use,” filed on Aug. 2, 2016, and U.S. patent applicationSer. No. 15/661,892—entitled “Multi-Junction Detector Device and Methodof Use,” filed on Jul. 27, 2017, the entire contents both of which areincorporated by reference in their entirety herein.

BACKGROUND

Photodiodes are the most commonly used photodetectors in use today.Presently, they are used in any variety of applications and are rapidlybeing incorporated into numerous additional applications. Generally,photodiodes offer a compact, rugged, low cost alternative tophotomultipliers or similar devices.

Currently, photodiodes are manufactured from a number of materials, eachmaterial offering sensitivity within a defined range of theelectromagnetic spectrum. For example, as shown in FIG. 1, Silicon-basedphotodiodes and photodetectors typically produce significantphotocurrents when irradiated with a signal having a wavelength fromabout 180 nm to about 1100 nm. In contrast, as shown in FIG. 2,Germanium-based photodiodes produce significant photocurrents whenirradiated with a signal having a wavelength from about 800 nm to about1800 nm.

Presently, various applications utilize both Silicon-based photodiodesand Germanium-based photodiodes to measure optical signals having broadspectral characteristics (e.g. from about 180 nm to about 1800 nm). Asshown in FIGS. 3-5, multiple approaches have been utilized in the pastto construct a device or system which incorporates both Silicon-basedphotodiodes and Germanium-based photodiodes. For example, as shown inFIG. 3, prior art systems included a split light approach which includeda wavelength-dependent mirror or filter to separate the incident lightat a desired wavelength. While this approach proved somewhat useful inthe past, a number of shortcomings have been identified. For example, asshown in FIG. 4, a pronounced wavelength dependent responsivity gap ispresent at the point at which the mirror transitions from absorbing totransmitting an incident broad spectrum light.

In response, as shown in FIG. 5, an alternate prior art approach wasdeveloped which utilized a multiple layer or sandwich detector, whereinthe photodiode comprises a Silicon-based detector applied to the body ofa Germanium-based detector. Again, as shown in FIG. 6, a pronouncedwavelength dependent responsivity gap is present at the point at whichthe Silicon-based detector transitions from absorbing to transmitting anincident broad spectrum light using a sandwich detector approach.

Further, the responsivity of these devices varies depending on thewavelength of the incident signal. For example, while Silicon-basedphotodetectors are capable of detecting signals having a wavelength fromabout 180 nm to 1100 nm, the highest responsivity is from about 850 nmto about 1000 nm. As such, the measurement of broad spectral rangestypically requires multiple photodetectors each manufactured usingphotodiodes manufactured from different materials. As such, systemsincorporating multiple photodetectors manufactured from variousmaterials may be large and unnecessarily complex.

Thus, there is an ongoing need for a multi-junction detector devicecapable of detecting an incident signal with high responsivity at avariety of wavelengths with very few if any spectral gaps ordiscontinuities, thereby offering smooth, continuous spectralmeasurements.

SUMMARY

The present application is directed to a novel multi-junction detectordevice and method of manufacture or use. In one embodiment, the presentapplication discloses a method of manufacture by providing at least onehousing with at least one system mount body positioned therein. At leastone first detector with a first wavelength responsivity range may bemounted to the system mount body and at least one second detector with asecond wavelength responsivity range may be mounted to a second detectormount body. At least one beam dump region with at least one mount bodywall may be formed within the system mount body such that the beam dumpregion is positioned in optical communication with the first detectorand the second detector. The first detector and/or the second detectormay also be a detector array. An additional detector with a thirdwavelength responsivity range may also be mounted on the system mountbody or the second the second detector mount body. The system mount bodyand the second detector mount body may be formed as a monolithic body.The mount body wall formed in the beam dump region may be formed with anarcuate shape, an arcuate shape with varying radius, a polygonal shapeor a polyhedral shape. The method of manufacture may also compriseforming a heat dissipating feature on the mount body wall of the beamdump region or the system mount body or the second detector mount body.A reflectivity enhancing material may be deposited on the mount bodywall of the beam dump region. An energy dissipating material configuredto reduce or prevent unwanted reflected energy from propagating to thefirst detector or the second detector may be deposited on the mount bodywall of the beam dump region. A processor device may be provided, theprocessor device being in communication with the first and seconddetectors via at least one conduit.

In another embodiment, the present application discloses amulti-junction detector device having at least one housing. At least onemount system body may be positioned within the housing. At least onebeam dump region may be formed in the mount system body. A firstdetector having a first wavelength responsivity range may be positionedon the mount system body. Further, at least a second detector having atleast a second wavelength responsivity range may be positioned on themount system body in optical communication with the first detector.During use, the first detector may be configured to absorb a portion ofan incident optical signal within the first wavelength responsivityrange and the second detector may be configured to absorb a portion ofan incident optical signal within the second wavelength responsivityrange and reflect at least a portion of the optical signal to the beamdump region.

In another embodiment, the multi-junction detector may include at leastone mount system body. At least a first detector having a firstwavelength responsivity range may be positioned on the mount systembody. The first detector may be configured to absorb light of a firstspectral range of an incident optical signal and to reflect unabsorbedlight to at least a second detector coupled to or positioned proximateto the mount system body. The second detector has at least a secondwavelength responsivity range and is in optical communication with thefirst detector. The second detector may be configured to absorb lightwithin a second spectral range and reflect an unabsorbed portion of theoptical signal to at least one beam dump region in optical communicationwith the second detector.

In another embodiment, the present application is directed to amulti-junction detector device. The multi-junction detector device mayinclude at least one housing configured to house and securely positionat least one integrating sphere therein. In one embodiment, at least onedetector device may be positioned within the integrating sphere. Forexample, a first detector having a first wavelength responsivity rangeand configured to absorb light from an incident optical signal andgenerating a first responsivity signal, at least a second detectorhaving at least a second wavelength responsivity range and configured toabsorb light and generating a second responsivity signal may bepositioned within or proximate to at least one integrating sphere.Further, at least one electrical circuit may be in communication with atleast one of the first and second detectors and configured to receive atleast the first and second responsivity signals from at least the firstand second detectors. In addition, the multi-junction detector devicemay include at least one processor device configured in electricalcommunication with the at least one electrical circuit and configured toreceive and combine at least the first and second responsivity signalsinto an extended range signal, wherein the extended-range signalexhibits a substantially linear spectral response over an extended rangeof wavelengths.

Other features and advantages of the embodiments of the novelmulti-junction detector device as disclosed herein will become apparentfrom a consideration of the following detailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the multi-junction detector device will beexplained in more detail by way of the accompanying drawings, wherein:

FIG. 1 shows a graph of the spectral response of a typical Siliconphotodiode as known in the prior art;

FIG. 2 shows a graph of the spectral response of a typical Germaniumphotodiode as known in the prior art;

FIG. 3 shows a schematic of an apparatus for using a combination ofSilicon-based and Germanium-based photodiodes as known in the prior art;

FIG. 4 shows a graph of the spectral response of a combined Silicon &Germanium photodiode as used in the cold mirror arrangement shown inFIG. 3;

FIG. 5 shows schematic of a combination of Silicon and Germaniumphotodiodes in a multiple-layer or sandwich configuration as known inthe prior art;

FIG. 6 shows a graph of the spectral response of a combined Silicon &Germanium photodiode as used in the multiple layer or sandwicharrangement shown in FIG. 5 as known in the prior art;

FIG. 7 shows an elevated perspective view of an embodiment of themulti-junction detector device;

FIG. 8 shows an elevated perspective view of an embodiment of themulti-junction detector device wherein the internal componentspositioned within a housing as illustrated;

FIG. 9 shows an exploded view of an embodiment of the multi-junctiondetector device;

FIG. 10 shows an exploded view of an embodiment of the multi-junctiondetector device;

FIG. 11 shows a side view of an embodiment of the multi-junctiondetector device;

FIG. 12 shows a detailed side view of an embodiment of themulti-junction detector device;

FIG. 13 shows a schematic representation of an embodiment of themulti-junction detector device, showing an optical signal partiallyabsorbed and partially reflected by the Germanium and Siliconphotodiodes, respectively;

FIG. 14 shows a graph of the spectral responsivity of an embodiment ofthe multi-junction detector device;

FIG. 15 shows a schematic diagram of an embodiment of the multi-junctiondetector device wherein the circuit paths are configured in parallel;

FIG. 16 shows an electrical schematic of an alternate embodiment of themulti-junction detector device wherein the photodiodes in the parallelcircuit paths are reversed-biased;

FIG. 17 shows an electrical schematic of an embodiment of themulti-junction detector device wherein the output of the parallelcircuit paths is fed to an operational amplifier;

FIG. 18 shows an electrical schematic of an embodiment of themulti-junction detector device wherein the output of the parallelcircuit paths is fed to an operational amplifier that is voltage-biased;

FIG. 19 shows an electrical schematic of an embodiment of themulti-junction detector device wherein the parallel circuit paths arevoltage-biased and connected to an operational amplifier.

FIG. 20 shows a detailed view of an embodiment of the multi-junctiondetector device using a single integrating sphere wherein the internalcomponents position within the housing are shown; and

FIG. 21 shows a detailed view of an embodiment of the multi-junctiondetector device using multiple integrating spheres wherein the internalcomponents position within the housing are shown.

DETAILED DESCRIPTION

The present application is directed to several embodiments of amulti-junction detector device. In some embodiments, the multi-junctiondetector device includes a first detector and at least a second detectortherein, although those skilled in the art will appreciate that anynumber and type of detector devices may be used with the multi-junctiondetector device. Further, in some embodiments, the first detector devicemay have a first spectral responsivity range while the second detectordevice may have a second spectral responsivity range. Optionally, thefirst and second spectral responsivity ranges may be the same ordifferent.

FIGS. 7 and 8 show various views of an exemplary embodiment of amulti-junction detector device. As shown in FIG. 7, the detector device10 includes at least one detector body 12. In the illustratedembodiment, the detector device body 12 is formed by a first detectorhousing body 14 and a second detector housing body 16, although thoseskilled in the art will appreciate that any number of detector housingbodies may be used to form the detector device body 12. In theillustrated embodiment, at least one of the first detector housing body14 and second detector housing body 16 is constructed of aluminum. Inanother embodiment, at least one of the first and second detectorhousing bodies 14, 16 may be manufactured from any variety of materials,including, aluminum, steel, various alloys, composite materials,Delrin®, various polymers, and the like.

Referring again to FIGS. 7 and 8, in the illustrated embodiment thedetector device body 12 may include at least one coupling member 18configured to couple the first detector body housing 14 to the seconddetector body housing 16 to cooperatively form the detector device body12. In the illustrated embodiment, the coupling member 18 comprises athreaded screw, although those skilled in the art will appreciate thatany variety of coupling devices may be used to couple the first detectorbody housing 14 to the second detector body housing 16 to form thedetector device body 12. For example, the coupling member 18 maycomprise at least one friction fit device, lock pin device, or similardevice.

Referring again to FIGS. 7 and 8, one or more apertures 22 may be formedon the detector device body 12. In the illustrated embodiment, a singleaperture 22 is formed on at least one surface of the first detectorhousing body 14 of the detector device body 12. For example, theaperture 22 may be formed on a first surface 20 of the first detectorhousing body 14. Optionally, any number of apertures may be formed atvarious locations on the detector device body 12. Further, one or moreflange members 24 or similar devices may be coupled or otherwise formedon at least one of the first detector housing body 14, second detectorhousing body 16, or both. In the illustrated embodiment, the flangemember 24 may include at least one alignment aid or target 26 positionedthereon. Optionally, the flange member 24 may be useful in coupling thedetector device 10 to a work piece support, optical mount, scaffold, andthe like.

FIGS. 8-12 show various views of the internal components of the detectordevice 10. As shown, the at least one housing cavity 30 is formed withinat least one of the first detector housing body 14 and the seconddetector housing body 16. In the illustrated embodiment, a singlehousing cavity 30 is cooperatively formed by the first and seconddetector housing bodies 14, 16. Optionally, multiple housing cavitiesmay be formed within the detector body 12 by at least one of the firstdetector housing body 14 and/or the second detector housing body 16. Assuch, a single detector body 12 may be configured to contain multipledetector systems therein.

As shown in FIGS. 8-10, at least one interface coupling member 56configured to couple the detector device 10 to at least one processor,computer, power supply, and/or similar interface may be coupled at leastone of the first and second detector housing bodies 14, 16. For example,as shown in FIGS. 9 and 10, in one embodiment at least a portion of theinterface coupling member 56 may be positioned within or incommunication with the housing cavity 30 formed in the detector body 12via at least one interface coupling member passage 74. In theillustrated embodiment, the interface coupling member 56 comprises athreaded member configured to have at least one conduit (not shown)coupled thereto. Optionally, any number and/or variety of interfacecoupling member 56 may be used to couple any number of externalprocessing devices (not shown) to the detector device 10. In anotherembodiment, the interface coupling member 56 may comprise one or moreclips or similar friction fit devices configured to couple one or moreconduits to the detector device 10. In another embodiment, the detectordevice 10 may be configured to couple to one or more externalprocessors, computers, networks, power supplies, and the likewirelessly. As such, the interface coupling member 56 may comprise awireless communication device, Bluetooth device, inductive chargingsystems, and/or similar communication system. As such, the detectordevice 10 may include internal processing capabilities, controllers, andthe like.

Referring again to FIGS. 8-12, at least one detector system mount body40 and at least one second detector mount body 60 cooperatively form atleast one detector support assembly 52 configured to secure and positionone or more detectors within the detector body 12. In one embodiment, atleast one of the detector system mount body 40 and the second detectormount body 60 is manufactured from aluminum, although those skilled inthe art will appreciate that the detector system mount body 40 and thesecond detector mount body 60 may be manufactured from any variety ofmaterials, including, without limitations, steel, copper, alloys,titanium, composite materials, ceramic materials, polymers, plastics,nylons, Delrin®, and the like. At least one of the detector system mountbody 40 and second detector mount body 60 may be configured to bepositioned within the housing cavity 30. For example, in the illustratedembodiments, the detector system mount body 40 is configured to supporta first detector 42 and at least a second detector 66 within the housingcavity 30 formed in the detector system mount body 40. For example, inone embodiment the first detector 42 comprises at least one Germaniumdetector while the second detector 66 comprises at least one Silicondetector. Optionally, any number and variety of detectors may be used inthe detector device 10. For example, in an alternate embodiment thefirst and second detector 42, 66 may comprise an Indium Gallium Arsenide(InGaAs) detector while the second detector comprises Mercury CadmiumTelluride (HgCdTe) detector. Any variety of detectors, including withoutlimitations, Germanium (Ge), Silicon (Si), Gallium Arsenide (GaAs), Lead(II) Sulfide (PbS), Mercury Cadmium Telluride (HgCdTe) Gallium Nitride(GaN), Cadmium Zinc Telluride (CdZnTe), Gallium Phosphide (GaP) andsimilar detectors may be used with the detector device 10. Optionally,at least one of the detectors may comprise at least onephoto-multiplying device. In another embodiment, the detector device 10may include any variety of detectors, including, without limitations,active pixel sensors, image sensors, bolometers, charge coupled devices,particle detectors, photographic plates, cryogenic detectors, gaseousionization detectors, reversed-biased LEDs, optical detectors,pyroelectric detectors, Golay cells, thermocouples, thermistors,photoresistors, photovoltaic cells, photodiodes, photoconductivedevices, phototransistors, quantum dot photoconductors and photodiodes,semiconductor detectors, silicon drift detectors, and the like.Optionally, the first and second detector 42, 66, respectively, may bemanufactured from the sale or different materials. As such, the firstand second detectors 42, 66, respectively, may or may not share the samespectral responsivity.

In the embodiments shown in FIGS. 8-13, the first detector 42 ispositioned on or otherwise coupled to the detector receiving region 44,which is formed on the detector system mount body 40. In one embodiment,the first detector 42 may be positioned substantially co-planar with thealignment target 26 located on the flange member 24 positioned on anexterior surface of the second housing body 16. As such, the user mayfocus the incident signal on the alignment aid 26 position on the flangemember 24, then laterally reposition the detector device 10 such thatthe incident signal traverses through the aperture 22 formed on thefirst housing body 14 and is incident on the first detector 42. In theillustrated embodiment, the detector receiving region 44 is positionedangularly in relation to the incident signal 82 and parallel to thefirst detector 42 (See FIG. 11). In one embodiment, the first detector42 is configured to reflect at least a portion of the light incidentthereon onto the second detector 66 positioned on the second detectormount body 60.

As shown in FIGS. 8-12, the detector system mount body 40 may include atleast one mount receiving surface 46 configured to have at least onesecond detector mount body 60 coupled thereto. In one embodiment, themount receiving surface 46 comprises a generally planar surfaceconfigured to have the second detector mount body 60 detachably coupledthereto. As such, the mount receiving surface 46 may include one or morefastener recesses or receivers 54 formed therein, the fastener receivers54 configured to receive at least one fasteners 28. As shown in FIGS. 9and 10, the fasteners 28 may be configured to traverse through the mountcoupling region 64 formed on the second detector mount body 60 and besecurely retained within the fastener recesses 54 formed on the mountreceiving surface 46 of the detector system mount body 40. The fasteners28 may also be configured to traverse through one or more fastenerreceivers 72 formed in the second detector housing body 16 and besecurely retained within fastener recesses 58 formed on the mountreceiving surface 59. As such, the detector system mount body 40 andsecond detector mount body 60 may be coupled to the second detectormount housing body 16. Optionally, the second detector mount body 60 maybe coupled to the detector system mount body 40 using any variety ofalternate coupling devices or methods. For example, the second detectormount body 60 may be coupled to the detector system mount body 40 usingfriction fit devices, slip fit devices, magnetic coupling devices, pins,latches, adhesives, epoxies, dovetail features, mechanical couplingfeatures and methods, and the like. In an another embodiment, thedetector system mount body 40 and second detector mount body 60 may forma monolithic body.

Referring again to FIGS. 8-12, the detector system mount body 40 mayinclude at least one beam dump region or similar energy dissipation trapor mechanism 48. During use, the beam dump region 48 is configured toreceive optical radiation therein and absorb and/or dissipate thereflected energy. For example, in the illustrated embodiment the beamdump region 48 includes at least one mount body wall 50 formed in thedetector system mount body 40. For example, in the illustratedembodiment the mount body wall 50 comprises an arcuate surface adjacentto a flat surface configured to receive and retain optical radiationwithin the detector system mount body 40. Alternatively, the mount bodywall 50 may have an arcuate shape of varying radius, a polygonal shape,a polyhedral shape or any other shape configured to reflect light intothe beam dump region 48. In one embodiment, the mount body wall 50includes at least one dissipative feature or material applied thereto,the dissipative feature configured to dissipate the optical radiationincident thereon. In another embodiment, the mount body wall 50 mayinclude at least one reflectivity enhancing material applied thereon.Optionally, any number of additional energy dissipating materials,features, and/or devices may be positioned on or proximate to the mountbody wall 50, these additional energy dissipating materials configuredto reduce or prevent unwanted reflected energy from propagating to atleast one of the light source, the first detector 42, and/or the seconddetector 66. Optionally, at least a portion of the beam dump region 48,the detector system mount body 40, and/or the second detector mount body60 include heat dissipating features, devices, and/or system formedthereon or in communication therewith. As such, the beam dump region 48,the detector system mount body 40, and/or the second detector mount body60 may act as a heat sink.

As shown in FIGS. 8-12, the second detector mount body 60 may include atleast one detector mounting region 62 configured to have one or moredetectors coupled thereto or positioned thereon. As stated above, anyvariety of detectors 66 may be coupled to the detector coupling region62, including, without limitations, Silicon (Si), Germanium (Ge) IndiumGallium Arsenide (InGaAs), Cadmium Zinc Telluride (CdZnTe), MercuryCadmium Telluride (HgCdTe), Gallium Arsenide (GaAs), Lead (II) Sulfide(PbS), Gallium Nitride (GaN) and Gallium Phosphide (GaP) detectors. Inthe illustrated embodiment, the detector 66 is positioned on the seconddetector mounting surface 68 positioned proximate to the detectorreceiver region 44 formed on the detector system mount body 40. Further,as stated above, the second detector 66 is positioned on the seconddetector mounting surface 68 is configured to receive at least a portionof the light incident on and reflected by the first detector 42positioned on the detector receiving region 44 formed on the detectorsystem mount body 40.

As shown in FIGS. 11 and 12, during use an incoming optical signal 82 isincident on the first detector 42 positioned on the detector receivingregion 44 of the detector system mount body 40. The first detector 42may generate an output signal (optical, electrical, etc.) which may besent via at least one conduit 92 coupled to the interface couplingmember 56 to one or more circuits, processors, networks, computers, orthe like proportional to its responsivity. As such, the first detector42 may be in communication with the interface coupling member 56 via atleast one internal conduit 92 or similar communication device. As shown,the first detector 42 is angularly positioned proximate to the seconddetector 66 positioned on the second detector receiving surface 68 ofthe second detector mount body 60. As such, at least a portion of theoptical signal 82 incident on the first detector 42 may be reflectedfrom the surface of the first detector 42 and is incident on the seconddetector 66, which, like the first detector 42, may be in communicationwith the interface coupling member 56 via at least one internal conduit94 or communication device. As such, the second detector 66 coupled tothe interface coupling member 56 may be in communication with one ormore processors, networks, computers, or the like.

Referring again to FIGS. 11 and 12, the second detector 66 may generateat least one output signal in response to the reflected light 82 beingincident thereon. In a more specific embodiment, the first detector 42may comprise a Germanium detector having a desired spectral responsivityfrom about 800 nm to about 1800 nm, while the second detector comprisesa Silicon detector having a desired spectral responsivity from about 180nm to about 1100 nm. The detectors 42, 66 may be configured to measurevarious characteristics of the signal 82, including, withoutlimitations, wavelength, power, spectral characteristics, and the like.As such, the spectral characteristics of an incoming signal 82 comprisedof any number of wavelengths from about 180 nm to about 1800 nm may beaccurately measured using the detector device 10 described herein. Forexample, the portion of the incident signal having a wavelength fromabout 180 nm to about 1100 nm would be reflected off the surface of thefirst detector 42, which is substantially non-responsive to light withinthis spectral range, and is reflected on to the second detector 66,which is highly responsive to light from about 180 nm to about 1100 nm.In contrast, an incoming signal 82 having a wavelength of about 800 nmto about 1800 nm would be measured by the first detector 42, which ishighly responsive to light having a wavelength from about 800 nm toabout 1800 nm. Thereafter, any light having a wavelength from about 800nm to about 1800 nm reflected on to the second detector 66, which issubstantially non-responsive to light having a wavelength of greaterthan about 1100 nm would be reflected by the surface of the seconddetector 66 to the beam dump region 48. As a result, the user may easilyand accurately characterize the spectral responsivity of the incidentsignal 82 and/or detector response of the detector system 10 from aboutultraviolet wavelengths (about 180 nm) to infrared wavelengths (about1800 nm) without requiring the user to switch the between multipledetectors. For example, FIG. 14 shows graphically the theoreticalspectral responsivity as compared with the actual spectral responsivityof the detector device 10 described herein. As shown, unlike prior artdetector configurations, the detector device 10 described herein failsto exhibit the spectral gap in responsivity from about 900 nm to about1100 nm. Optionally, while the embodiments disclosed above are directedto configurations incorporating two detectors, those skilled in the artwill appreciate that the detector device 10 described herein may beeasily adapted to incorporate any number of detectors therein.

FIGS. 10-12 and 15-19 show various embodiments of circuits which may beused with the detector device described above. Unlike prior art systems,the various embodiments of the circuits shown in FIGS. 15-19 areconfigured to sum the outputs of the first detector 42 and seconddetector 66 to produce the graphical representation of the responsivity(See FIG. 14) of the detector device 10 described above. For example, asshown in FIG. 15, in one embodiment the circuit 100 includes multiplecircuit paths 102, 104, and 106 in parallel. Each circuit path 102, 104,and 106 includes at least one detector or photodiode D1, D2, Dx and atleast one resistor R1, R2, and Rx associated with each detector. Assuch, the first circuit path 102 includes detector D1 and resistor R1,the second circuit path 104 includes detector D2 and resistor R2, andthe third circuit path 106 includes detector Dx and resistor Rx. Thevarious circuit paths are coupled via one or more conduits 108 to one ormore amplifiers and/or output components 110. Those skilled in the artwill appreciate any number of circuit paths may be used with thedetector system 10. Further, those skilled in the art will appreciatethat at least one of the circuit paths may include any number ofadditional or alternate components, including, without limitations,diodes, resistors, capacitors, triodes, operational amplifiers,amplifiers, and the like. Optionally, the output device 110 may compriseat least one amplifier or similar device. In another embodiment, theoutput device 110 comprises at least one processor, analyzing device,and/or computer. Those skilled in the art will appreciate that anyvariety of devices may be used as an output device, including, withoutlimitations, external circuits, computer networks, amplifiers,processing devices, and the like.

FIG. 16 shows an alternate embodiment of a circuit device used with thedetector device 10 shown above. Like the previous embodiment, thecircuit 114 shown in FIG. 16 includes multiple circuit paths 116, 118,and 120 in parallel. The circuit path 116, 118, and 120 includes atleast one reverse-biased detector or photodiode D1, D2, Dx and at leastone resistor R1, R2, and Rx associated with each detector. The variouscircuit paths 116, 118, and 120 are coupled via one or more conduits 122to one or more amplifiers and/or output components 124. Those skilled inthe art will appreciate any number of circuit paths may be used with thedetector system 10. Further, those skilled in the art will appreciatethat at least one of the circuit paths may include any number ofadditional or alternate components, including, without limitations,diodes, resistors, capacitors, triodes, operational amplifiers,amplifiers, and the like.

Like the previous embodiment, the output device 124 may comprise atleast one amplifier or similar device. In another embodiment, the outputdevice 124 comprises at least one processor, analyzing device, and/orcomputer. Those skilled in the art will appreciate that any variety ofdevices may be used as an output device, including, without limitations,external circuits, computer networks, amplifiers, processing devices,and the like.

FIGS. 17-19 show various embodiments of circuits which include at leastone operational amplifier (hereinafter op-amp) therein which may be usedwith the detector device described above. As shown in FIG. 17, in oneembodiment the circuit 128 includes multiple circuit paths 130, 132, and134 in parallel. Each circuit path 130, 132, and 134 includes at leastone detector or photodiode D1, D2, Dx and at least one resistor R1, R2,and Rx associated with each detector. The various circuit paths arecoupled via one or more conduits 136 to one or more op-amps 138. Theop-amp 138 may include at least one gain or feedback circuit 140 havingone or more resistors R_(gain) or other components positioned therein.Exemplary other components include, without limitations, capacitors,inductors, diodes, and other passive and/or active components known inthe art. At least one output device 142 may comprise the output of theop-amp 138. In one embodiment, the output device 142 comprises at leastone processor, analyzing device, and/or computer. Those skilled in theart will appreciate that any variety of devices may be used as an outputdevice, including, without limitations, external circuits, computernetworks, amplifiers, processing devices, and the like.

FIG. 18 shows an alternate embodiment the circuit for use with thedetector device 10 shown above. As shown, the circuit 150 includesmultiple circuit paths 152, 154, and 156 in parallel. Like the previousembodiment, each circuit path 152, 154, and 156 includes at least onedetector or photodiode D1, D2, Dx and at least one resistor R1, R2, andRx associated with each detector. The various circuit paths are coupledvia one or more conduits 158 to one or more op-amps 160. The op-amp 160may include at least one gain or feedback circuit 162 having one or moreresistors R_(gain) or other components positioned therein. Further, atleast one input 164 of the op-amp 160 is voltage biased, with input 164providing a bias voltage V_(bias). At least one output device 166 iscoupled to the output of the op-amp 160. In one embodiment, the outputdevice 166 comprises at least one processor, analyzing device, and/orcomputer. Those skilled in the art will appreciate that any variety ofdevices may be used as an output device, including, without limitations,external circuits, computer networks, amplifiers, processing devices,and the like.

FIG. 19 shows another embodiment the circuit for use with the detectordevice 10 shown above. As shown, the circuit 168 includes multiplecircuit paths 172, 174, and 176 in parallel. Like the previousembodiment, each circuit path 172, 174, and 176 includes at least onedetector or photodiode D1, D2, Dx and at least one resistor R1, R2, andRx associated with each detector. Further, at least one of the circuitpaths 172, 174, and 176 is in communication with at least one voltagebias device 170 that provides a bias voltage V_(bias). The variouscircuit paths 172, 174, and 176 are coupled via one or more conduits 178to one or more op-amps 180. The op-amp 180 may include at least one gainor feedback circuit 182 having one or more resistors R_(gain) or othercomponents positioned therein. Further, at least one output device 184is coupled to the output of the op-amp 180. In one embodiment, theoutput device 184 comprises at least one processor, analyzing device,and/or computer. Those skilled in the art will appreciate that anyvariety of devices may be used as an output device, including, withoutlimitations, external circuits, computer networks, amplifiers,processing devices, and the like.

FIG. 20 shows an embodiment of the multi-junction detector device 190using a housing 191 with an integrating sphere body 192 and at least oneintegrating sphere surface 194 formed in the integrating sphere body 192and defining at least one volume 193. In the illustrated embodiment, theintegrating sphere body 192 is manufactured from Spectralon®.Alternatively, the integrating sphere body 192 may be manufactured fromaluminum, bronze, copper, steel, corrosion-resistant steels, plastics,composite materials, and the like. In the illustrated embodiment, theintegrating sphere surface 194 is coated with at least one coating 195.Exemplary coatings 195 include PTFE (Teflon®), sintered PTFE,Spectralon®, Spectraflect® Delrin®, Infragold®, silver, gold, chromiumor other coatings typically used with integrating spheres.Alternatively, the integrating sphere surface 194 may be modified bypolishing or roughing the integrating sphere surface 194 by beadblasting or similar processing to attain the desired reflectance ordiffusion of an input optical signal. In the illustrated embodiment, thesurface 194 and/or the coating 195 are configured to be highlyreflective over a spectral range of at least 180 nm to 1800 nm. Inaddition, the surface 194 or the coating 195 are configured to be highlyscattering following at least a Lambertian profile, a Gaussian profileor a combination thereof or other highly scattering profiles thatscatter the incident optical signal 200 between 0 degrees and equal toor less than 90 degrees from the surface normal. Alternatively, theremay be no coating applied to the surface 194. In the illustratedembodiment, ports 208 and 210 are formed in the integrating sphere body192 on opposing sides of the integrating sphere body 192 and in opticalcommunication with the volume 193. Alternatively, any number of portsmay be formed anywhere and at any orientation in the integrating spherebody 192 in optical communication with volume 193. In the illustratedembodiment, a first detector 204 is disposed in port 208 and at least asecond detector 198 is disposed in port 210. In the illustratedembodiment, one or more optical elements 196 and 202 are disposed inports 210 and 208 respectively. The optical elements 196 and 202 may beused to adjust the spectral response of the respective detectors 198 and204. Exemplary optical elements 196 and 202 include, without limitation,optical diffusers, optical filters, polarizers, waveplates, prisms,gratings, lenses, and the like. Alternatively, optical elements 196 and202 may comprise multiple sub-elements that are stacked, bonded to eachother, bonded to the detector surface, or not used at all. An incidentoptical signal 200 enters the integrating sphere body 192 through atleast one inlet port 206 formed in the integrating sphere body 192 andis incident upon the integrating sphere surface 194 and/or the coating195. The integrating sphere surface 194 or the coating 195 reflectsand/or diffuses the incident optical signal 200 within the volume 193.Light with a first spectral range is absorbed by the first detector 198and light with a second spectral range is absorbed by the seconddetector 204. For example, the portion of the incident signal having awavelength range from about 180 nm to about 1100 nanometers may bereflected from the surface of the first detector 198 which issubstantially non-responsive to light within this spectral range, and isabsorbed by the second detector 204, which is responsive to light fromabout 180 nm to about 1100 nm. In contrast, an incoming signal having awavelength range of about 800 nm to about 1800 nm would be absorbed bythe first detector 198 which is responsive to light with a wavelengthfrom about 800 to about 1800 nm. The first detector 198 may generate anoutput signal (optical, electrical, etc.) which may be sent via at leastone conduit 212 coupled to the interface coupling member 56 to one ormore processors, networks, computers, or the like proportional to itsresponsivity. As such, the first detector 198 may be in communicationwith the interface coupling member 56 via at least one internal conduit212 or similar communication device. At least a portion of the opticalsignal 200 incident on the first detector 198 may be reflected from thesurface of the first detector 198 and is incident on the second detector204, which, like the first detector 198, may be in communication withthe interface coupling member 56 via at least one internal conduit 210or communication device. As such, the second detector 204 coupled to theinterface coupling member 56 may be in communication with one or moreprocessors, networks, computers, or the like. Those skilled in the artwill appreciate that any integrating sphere configuration, any number orvariety of detectors, or any number or variety of optical elements maybe used to measure the incident optical signal.

FIG. 21 shows an embodiment of the multi-junction detector device 220using a housing 221 with an integrating sphere body 222, a firstintegrating sphere surface 224 formed in the integrating sphere body 222and defining a first volume 223, at least a second integrating spheresurface 228 formed in the integrating sphere body 222 and defining asecond volume 227. In the illustrated embodiment, at least one aperture225 is formed between the first volume 223 and the second volume 227 sothat the first volume 223 and the second volume 227 are in opticalcommunication. Alternatively, the first volume 223 and the second volume227 may be positioned in close proximity to each other such that aportion of the incident optical signal 230 may scatter from volume 223into volume 227. In the illustrated embodiment, at least one opticalelement 226 is disposed in the aperture 225. Alternatively, there may beno optical element disposed in the aperture 225. Exemplary opticalelements 226 include, without limitation, optical diffusers such asfrosted or ground glass or plastics, engineered diffusers in glass orplastics; optical filters, polarizers, waveplates, prisms, gratings,lenses, nonlinear crystals, saturable absorbers, phosphor-coatedsubstrates and the like. At least one incident light signal 203 entersthe first volume 223 through at least one port 232 formed in theintegrating sphere body 222 and is reflected and/or diffused by theintegrating sphere surface 224 or coating 219 such that at least aportion of the incident light enters the second volume 227 through theaperture 225. The integrating sphere surface 228 or the coating 229reflects and/or diffuses the incident light signal 230 within the secondvolume 227. Light with a first spectral range is absorbed by the firstdetector 244 and light with a second spectral range is absorbed by thesecond detector 238. For example, the portion of the incident signalhaving a wavelength range from about 180 nm to about 1100 nanometerswould be reflected off the surface of the first detector 244 which issubstantially non-responsive to light within this spectral range, and isabsorbed by the second detector 238, which is responsive to light fromabout 180 nm to about 1100 nm. In contrast, an incoming signal having awavelength range of about 800 nm to about 1800 nm would be absorbed bythe first detector 244 which is responsive to light with a wavelengthfrom about 800 to about 1800 nm. The first detector 244 may generate anoutput signal (optical, electrical, etc.) which may be sent via at leastone conduit 246 coupled to the interface coupling member 56 to one ormore processors, networks, computers, or the like, proportional to itsresponsivity. As such, the first detector 244 may be in communicationwith the interface coupling member 56 via at least one internal conduit246 or similar communication device. At least a portion of the opticalsignal 230 incident on the first detector 244 may be reflected from thesurface of the first detector 244 and is incident on the second detector238, which, like the first detector 244, may be in communication withthe interface coupling member 56 via at least one internal conduit 248or communication device. As such, the second detector 238 coupled to theinterface coupling member 56 may be in communication with one or moreprocessors, networks, computers, or the like. Those skilled in the artwill appreciate that any integrating sphere configuration, any number orvariety of detectors, or any number or variety of optical elements maybe used to measure the incident optical signal.

The embodiments disclosed herein are illustrative of the principles ofthe invention. Other modifications may be employed which are within thescope of the invention. Accordingly, the devices disclosed in thepresent application are not limited to that precisely as shown anddescribed herein.

What is claimed is:
 1. A method of manufacture of an opticalcharacterization device, comprising: providing at least one housing withat least one system mount body positioned therein; positioning at leastone first detector having a first wavelength responsivity range on theat least one system mount body; providing at least one second detectormount body coupled to the at least one system mount body; positioning atleast one second detector having a second wavelength responsivity rangeon the at least one second detector mount body, the at least one seconddetector being in optical communication with the at least one firstdetector; and forming at least one beam dump region with at least onemount body wall within the system mount body, the at least one beam dumpregion formed in optical communication with at least one of the at leastone first detector and the at least one second detector.
 2. The methodof claim 1, wherein at least one of the at least one first detector orthe at least one second detector is a detector array.
 3. The method ofclaim 1, further comprising providing at least one additional detectorhaving a third wavelength responsivity range positioned on the at leastone system mount body or the at least one second detector body.
 4. Themethod of claim 1, further comprising forming the at least one mountbody wall with at least one arcuate shape.
 5. The method of claim 1,further comprising forming the at least one mount body wall with atleast one arcuate shape of varying radius.
 6. The method of claim 1,further comprising forming the at least one mount body wall with atleast one polygonal shape.
 7. The method of claim 1, further comprisingforming the at least one mount body wall with at least one polyhedralshape.
 8. The method of claim 1, wherein the at least one seconddetector mount body and the at least one system mount body form amonolithic body.
 9. The method of claim 1, wherein at least one of theat least one beam dump region, the at least one second detector mountbody, or the at least one system mount body acts as a heat sink.
 10. Themethod of claim 1, further comprising forming at least one heatdissipating feature on at least one of the at least one mount body wallof the beam dump region, the at least one system mount body, or the atleast one second detector mount body.
 11. The method of claim 1, furthercomprising depositing at least one reflectivity enhancing material onthe at least one mount body wall of the at least one beam dump region.12. The method of claim 1, further comprising depositing at least oneenergy dissipating material on the at least one mount body wall, the atleast one heat dissipating material configured to reduce or preventunwanted reflected energy from propagating to the at least one firstdetector or the at least one second detector.
 13. The method of claim 1,further comprising providing at least one processor device, the at leastone processor device in communication with at least one of the at leastone first detector or the at least one second detector via at least oneconduit.